MoO3 films grown on stepped sapphire (0001) by molecular beam epitaxy
نویسندگان
چکیده
منابع مشابه
Layer matching epitaxy of NiO thin films on atomically stepped sapphire (0001) substrates
Thin-film epitaxy is critical for investigating the original properties of materials. To obtain epitaxial films, careful consideration of the external conditions, i.e. single-crystal substrate, temperature, deposition pressure and fabrication method, is significantly important. In particular, selection of the single-crystal substrate is the first step towards fabrication of a high-quality film....
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The structural, electrical, and optical properties of GaN grown on 6HSiC(0001) substrates by molecular beam epitaxy are studied. Suitable substrate preparation and growth conditions are found to greatly improve the structural quality of the films. Threading dislocation densities of about 1 × 10 cm for edge dislocations and < 1 × 10 cm for screw dislocations are achieved in GaN films of 0.8 μm t...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology A
سال: 2021
ISSN: 0734-2101,1520-8559
DOI: 10.1116/6.0000962